IS61WV12816EDBLL-10BI-TR

Density 2M
Org 128Kx16
Vcc 2.4-3.6V
Status Prod
Pkg Pins TSOP2(44), BGA(48)
Speed Ns 8, 10
Comment Previous Rev ECC Based SRAM

IS61WV12816EDBLL-10BI-TR Features

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) OCTOBER 2011 CMOS standby
  • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

Overview

The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS61WV12816EDBLL-10BI IS61WV12816EDBLL-8BI
IS61WV12816EDBLL IS61WV12816EDBLL-8BI-TR
IS61WV12816EDBLL-10BLI 10,000 IS61WV12816EDBLL-8BLI
IS61WV12816EDBLL-10BLI-TR IS61WV12816EDBLL-8BLI-TR
IS61WV12816EDBLL-10TI IS61WV12816EDBLL-8TI
IS61WV12816EDBLL-10TI-TR IS61WV12816EDBLL-8TI-TR
IS61WV12816EDBLL-10TLI 10,000 IS61WV12816EDBLL-8TLI 10,000
IS61WV12816EDBLL-10TLI-TR 1,000 IS61WV12816EDBLL-8TLI-TR