| Density | 8M |
|---|---|
| Org | 512Kx16 |
| Pkg(Pins) | BGA |
| Vcc | 1.7-1.95V |
| Solder | Lead-free (RoHS Compliant) |
| Status | Prod |
| Comment | Standard Asynch, IS66WV51216ALL/BLL |
| Die Rev | D |
| Speed(ns) | 70 |
| Temp.Range | Industrial Grade (-40C to +85°C) |
| Voltage Range | 2.2V (2.4V/2.5V) to 3.6V |
| Product Family | Pseudo SRAM |
| Item | 66 = Pseudo SRAM/HyperRAM™ |
| Revision | D = D |
| ROHS Version | L = true |
| Product Type | WV = Standard Asynch PSRAM |
| Temperature Range | I = Industrial (-40°C to 85°C) |
| Vdd(V) | BLL = 3V |
| Density Configuration | 51216 = 8Mb /512K x16 |
| Package Code | B = 48 TFBGA 6x8 |
The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOw (deselected) or when CS1 is LOw, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOw write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS66wV51216DALL and IS66/67wV51216DBLL are packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo available for die sales.