IS66WVC1M16ALL-7008BLI

Org	1Mx16
Pkg(Pins)	VFBGA(54)
Vcc	1.7-1.95V
Solder	Lead-free (RoHS Compliant)
Status	Prod
Comment	CRAM 1.5
Speed(ns)	70
Temp.Range	Industrial Grade (-40C to +85°C)
Voltage Range	1.65V to 2.2V
Product Family	Pseudo SRAM
Item	66 = Pseudo SRAM/HyperRAM™
ROHS Version	L = true
Product Type	WVC = Cellular RAM 1.5
Temperature Range	I = Industrial (-40°C to 85°C)
Speed	7008 = 80 MHz
Vdd(V)	ALL = 1.8V
Density Configuration	1M16 = 16Mb /1M x16
Package Code	B = 54-ball VFBGA

Datasheet

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IS66WVC1M16ALL-7008BLI Features

Single device supports asynchronous , page, and burst operation
Mixed Mode supports asynchronous write and synchronous read operation
Dual voltage rails for optional performance
- VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns
Burst mode for Read and Write operation
- 4, 8, 16,32 or Continuous
Low Power Consumption
- Asynchronous Operation < 25 mA
- Intrapage Read < 18mA
- Burst operation < 45 mA (@133Mhz)
- Standby < 80 uA(max.)
- Deep power-down (DPD) < 3uA (Typ)
Low Power Feature
- Reduced Array Refresh
- Temperature Controlled Refresh
- Deep power-down (DPD) mode
Operation Frequency up to 133Mhz
Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C

Overview

The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.