Org | 1Mx16 |
---|---|
Pkg(Pins) | VFBGA(54) |
Vcc | 1.7-1.95V |
Solder | Lead-free (RoHS Compliant) |
Status | Prod |
Comment | CRAM 1.5 |
Speed(ns) | 70 |
Temp.Range | Industrial Grade (-40C to +85°C) |
Voltage Range | 1.65V to 2.2V |
Product Family | Pseudo SRAM |
Speed | 7010 = 104 MHz |
Item | 66 = Pseudo SRAM/HyperRAM™ |
Vdd(V) | ALL = 1.8V |
Density Configuration | 1M16 = 16Mb /1M x16 |
Package Code | B = 54-ball VFBGA |
ROHS Version | L = true |
Product Type | WVC = Cellular RAM 1.5 |
Temperature Range | I = Industrial (-40°C to 85°C) |
The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.