Density | 16M |
---|---|
Org | 1Mx16 |
Vcc | 1.7-1.95V |
Status | Prod |
Pkg Pins | VFBGA(54) |
Speed Ns | 70 |
Comment Previous Rev | CRAM 1.5 |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS Version | L = true |
Product Type | WVC = Cellular RAM 1.5 |
Temperature Range | I = Industrial (-40°C to 85°C) |
Speed | 7010 = 104 MHz |
Vdd(V) | ALL = 1.8V |
Density Configuration | 1M16 = 16Mb /1M x16 |
Package Code | B = 54-ball VFBGA |
The IS66WVC1M16EALL and IS67WVC1M16EALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS66WVC1M16EALL-7010BLI-TR | IS66WVC1M16EALL-7013BLI-TR | ||||
IS66WVC1M16EALL-7008BLI | IS67WVC1M16EALL-7010BLA1 | ||||
IS66WVC1M16EALL-7008BLI-TR | IS67WVC1M16EALL-7010BLA1-TR | ||||
IS66WVC1M16EALL-7013BLI |