IS66WVE2M16ALL-70BLI

Density	32M
Org	2Mx16
Pkg(Pins)	TFBGA(48)
Vcc	1.7-1.95V
Vdd(V)	ALL = 1.8V
Solder	Lead-free (RoHS Compliant)
Status	Prod
Comment	Asynch/Page
Speed(ns)	70
Temp.Range	Industrial Grade (-40C to +85°C)
Product Type	WVE = Asynch/Page PSRAM
Product Family	Pseudo SRAM
Item	66 = Pseudo SRAM/HyperRAM™
ROHS Version	L = true
Temperature Range	I = Industrial (-40°C to 85°C)
Speed	70 = 70 MHz
Density Configuration	2M16 = 32Mb /2M x16
Package Code	B = 48-ball TFBGA

Datasheet

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IS66WVE2M16ALL-70BLI Features

Asynchronous and page mode interface
Dual voltage rails for optional performance
- VDD 1.8V, VDDQ 1.8V
Page mode read access
- Interpage Read access : 70ns
- Intrapage Read access : 20ns
Low Power Consumption
- Asynchronous Operation < 30 mA
- Intrapage Read < 18mA
- Standby < 180 uA (max.)
- Deep power-down (DPD) < 3uA (Typ) additional information.
Low Power Feature
- Temperature Controlled Refresh
- Partial Array Refresh
- Deep power-down (DPD) mode
Operating temperature Range Industrial and Automotive A1: -40°C~85°C

Overview

The IS66WVE2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.