IS66WVE4M16BLL-70BLI-TR

Org	4Mx16
Pkg(Pins)	TFBGA(48)
Vcc	2.7 to 3.6V
Vdd(V)	BLL = 3V
Solder	Lead-free (RoHS Compliant)
Status	Prod
Comment	Asynch/Page
Outpack	Tape on Reel
Speed(ns)	70
Temp.Range	Industrial Grade (-40C to +85°C)
Product Type	WVE = Asynch/Page PSRAM
Product Family	Pseudo SRAM
Item	66 = Pseudo SRAM/HyperRAM™
ROHS Version	L = true
Temperature Range	I = Industrial (-40°C to 85°C)
Speed	70 = 70 MHz
Density Configuration	4M16 = 64Mb /4M x16
Package Code	B = 48-ball TFBGA

Datasheet

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IS66WVE4M16BLL-70BLI-TR Features

Asynchronous and page mode interface
Dual voltage rails for optional performance
- VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
Page mode read access
- Interpage Read access : 70ns
- Intrapage Read access : 20ns
Low Power Consumption
- Asynchronous Operation < 30 mA
- Intrapage Read < 18mA
- Standby < 180 uA (max.)
- Deep power-down (DPD) < 3uA (Typ) Notes:
Low Power Feature
- Temperature Controlled Refresh
- Partial Array Refresh
- Deep power-down (DPD) mode
Operating temperature Range Industrial -40°C~85°C

Overview

The IS66WVE4M16BLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.