Density | 8M |
---|---|
Org | 512Kx16 |
Vcc | 1.7-1.95V/ 2.7-3.6V |
Status | Prod |
Pkg Pins | TFBGA(48) |
Speed Ns | 70 |
Comment Previous Rev | Asynch/ Page |
Item | 66 = Pseudo SRAM/HyperRAM™ |
Product Type | WVE = Asynch/Page PSRAM |
Temperature Range | I = Industrial (-40°C to 85°C) |
Speed | 70 = 70 MHz |
Vdd(V) | BLL = 3V |
Density Configuration | 51216 = 8Mb /512K x16 |
Package Code | B = 48-ball TFBGA |
Outpack | Tape on Reel |
The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.