IS46QR85120B-TR

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Density	4G
Org	512Mx8
Vcc	1.2V
Type	DDR4
Refresh	8K
Speed	2666, 2400
Status	Prod
Comment
Pkg Pins	BGA(78)
Number Of Words	5120 = 512M
Operating Voltage Range	QR = 1.1V - 1.8V DDR4
Generation	TR = TR
Bus Width	8 = x8
Product Family	46 = DDR/DDR2/DDR3/DDR4 Automotive grade
Outpack	Tape on Reel

IS46QR85120B-TR Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 933 MHz
8 internal banks for concurrent operation
8n-bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C 0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C OPTIONS
Configuration: 128Mx8 64Mx16
Package: 96-ball BGA (9mm x 13mm) for x16 78-ball BGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 125J 107M JEDEC Speed Grade DDR3-1600J DDR3-1866M DECEMBER 2020
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
Write Leveling
Up to 200 MHz in DLL off mode