IS42R16800E-8BL-TR

Density 128M
Org 8Mx16
Vcc 2.5V
Type SDR
Refresh 4K
Status EOL
Comment
Pkg Pins TSOP2(54), BGA(54)
Speed Mhz 133
Temp. Grade blank = Commercial Grade (0°C to +70°C)
Solder Type L = SnAgCu
Generation E = E
Number Of Words 800 = 8M
Operating Voltage Range R = 2.5V DDR or 2.5V SDR
Bus Width 16 = x16
Package Type B = BGA
Product Family 42 = SDR Commercial/Industrial grade
Outpack Tape on Reel

IS42R16800E-8BL-TR Features

  • Clock frequency: 133, 125 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: 2.5V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

Overview

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42R16800E-8BL IS42R16800E-8TLI
IS42R16800E-75BL IS42R16800E-8TLI-TR
IS42R16800E-75BL-TR IS45R16800E-75BLA1
IS42R16800E-75BLI IS45R16800E-75BLA1-TR
IS42R16800E-75BLI-TR IS45R16800E-75BLA2 301
IS42R16800E-75TL IS45R16800E-75BLA2-TR
IS42R16800E-75TL-TR IS45R16800E-75TLA1
IS42R16800E-75TLI IS45R16800E-75TLA1-TR
IS42R16800E-75TLI-TR IS45R16800E-8BLA1
IS42R16800E-8BLI IS45R16800E-8BLA1-TR
IS42R16800E-8BLI-TR IS45R16800E-8BLA2
IS42R16800E-8TL IS45R16800E-8BLA2-TR
IS42R16800E-8TL-TR