IS42VS16400E-75TLI-TR

Org	4Mx16
Pkg(Pins)	TSOP
Vcc	1.8V
Refresh	4K
No. of Words	4M
Solder	100% matte Sn
Status	EOL
Outpack	Tape on Reel
Type	MSDR
Bus Width	16 = x16
Speed(Mhz)	133
Temp.Range	Industrial Grade (-40C to +85°C)
Generation/Rev	E
Product Family	42 = SDR Commercial/Industrial grade
Temp. Grade	I = Industrial Grade (-40°C to +85°C)
Solder Type	L = 100% matte Sn
Generation	E = E
Number Of Words	400 = 4M
Speed	75 = 133Mhz
Operating Voltage Range	VS = 1.8V SDR
Package Type	T = TSOP

Datasheet

Get Quote

IS42VS16400E-75TLI-TR Features

Clock frequency: 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single 1.8V power supply
LVCMOS interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Self refresh modes
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Byte controlled by LDQM and UDQM
Industrial temperature availability

Overview

ISSI's 64Mb Synchronous DRAM IS42VS16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.