IS42VS32200E-75BL

Density 64M
Org 2Mx32
Vcc 1.8V
Type MSDR
Refresh 4K
Status EOL
Comment
Pkg Pins TSOP2(86), BGA(90)
Speed Mhz 133
Temp. Grade blank = Commercial Grade (0°C to +70°C)
Solder Type L = SnAgCu
Generation E = E
Number Of Words 200 = 2M
Speed 75 = 133Mhz
Operating Voltage Range VS = 1.8V SDR
Bus Width 32 = x32
Package Type B = BGA
Product Family 42 = SDR Commercial/Industrial grade

IS42VS32200E-75BL Features

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 1.8V power supply
  • LVTTL interface
  • Programmable burst length: (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 400-mil 86-pin TSOP II and 90-ball BGA

Overview

ISSI's 64Mb Synchronous DRAM IS42VS32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42VS32200E-75BL-TR 2,500 IS42VS32200E-10TLI
IS42VS32200E IS42VS32200E-10TLI-TR
IS42VS32200E-10BL 144 IS42VS32200E-75BLI 240
IS42VS32200E-10BL-TR 2,500 IS42VS32200E-75BLI-TR 2,500
IS42VS32200E-10BLI 41,249 11,673 IS42VS32200E-75TL 1,448 100
IS42VS32200E-10BLI-TR 2,500 IS42VS32200E-75TL-TR 1,500
IS42VS32200E-10TL 108 IS42VS32200E-75TLI 500
IS42VS32200E-10TL-TR 1,500 IS42VS32200E-75TLI-TR 1,500