IS42VS32800J-10TLI-TR

Density 256M
Org 8Mx32
Vcc 1.8V
Type SDR
Refresh 8K
Status Prod
Comment
Pkg Pins TSOP2(86), BGA(90)
Speed Mhz 125, 100
Temp. Grade I = Industrial Grade (-40°C to +85°C)
Solder Type L = 100% matte Sn
Generation J = J
Number Of Words 800 = 8M
Operating Voltage Range VS = 1.8V SDR
Bus Width 32 = x32
Package Type T = TSOP
Product Family 42 = SDR Commercial/Industrial grade
Outpack Tape on Reel

IS42VS32800J-10TLI-TR Features

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
    • Sequential and Interleave
  • Auto Refresh (CBR) OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VSxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54) x32
    • TSOP II (86)

Overview

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Synchronous DRAM is designed to minimize power consumption making it ideal for low- power applications.

 

Related Part Number(s)

Description Stock Qty Available Qty
IS42VS32800J-10TLI 106