| Buy | |
|---|---|
| Density | 4G |
| Org | Two channel (2x16) |
| Vcc | 1.1V/1.8V |
| Type | LPDDR4 |
| Speed | 3200 |
| Status | Prod |
| Pkg Pins | BGA(200) |
| Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
| Solder Type | L = SnAgCu |
| Number Of Words | 128 = 128M |
| CL (CAS Latency) | T = 17 |
| Operating Voltage Range | LQ = 1.1V LPDDR4 |
| Generation | EA = EA |
| Bus Width | 32 = x32 |
| Package Type | B = BGA |
| Product Family | 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade |
| Outpack | Tape on Reel |
The IS66/67WVS1M8ALL/BLL are integrated memory device containing 8Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 8 bits. The device supports SPI (Serial Peripheral Interface) & QPI (Quad Peripheral Interface) protocols, Very Low Signal Count (6 signal pins; CLK, CE#, and 4 SIOs), Hidden Refresh Operation, and Industrial temperature and Automotive A2 grade temperature. In-Band Reset is supported instead of dedicated RESET# pin, and minimum transferred data size is 8bit. PERFORMANCE SUMMARY.