IS45S16100F-7TLA1-TR

Density 16M
Org 1Mx16
Vcc 3.3V
Type SDR
Refresh 2K
Speed 7 = 143MHz
Status Contact ISSI
Comment
Pkg Pins TSOP2(50), BGA(60)
Temp. Grade A1 = Automotive Grade (-40°C to +85°C)
Solder Type L = 100% matte Sn
Generation F = F
Number Of Words 100 = 1M
Operating Voltage Range S = 3.3V SDR
Bus Width 16 = x16
Package Type T = TSOP
Product Family 45 = SDR Automotive grade
Outpack Tape on Reel

IS45S16100F-7TLA1-TR Features

  • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz JUNE 2012
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 2048 refresh cycles every 32 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Packages 400-mil 50-pin TSOP-II and 60-ball BGA
  • Lead-free package option

Overview

ISSI’s 16Mb Synchronous DRAM IS42S16100F, IS45S16100F and IS42VS16100F are each organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS45S16100F-7TLA1 5 5 IS45S16100F-6TLA1-TR
IS45S16100F IS45S16100F-7BLA1 286
IS45S16100F-6BLA1 IS45S16100F-7BLA1-TR 2,500
IS45S16100F-6BLA1-TR IS45S16100F-7CTLA1 5,879
IS45S16100F-6TLA1 IS45S16100F-7CTLA1-TR