IS45S16160J-6BLA2

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Density	256M
Org	16Mx16
Vcc	3.3V
Type	SDR
Refresh	8K
Speed	6 = 166MHz
Status	Prod
Comment
Pkg Pins	TSOP2(54), BGA(54)
Temp. Grade	A2 = Automotive Grade (-40°C to +105°C)
Solder Type	L = SnAgCu
Number Of Words	160 = 16M
Operating Voltage Range	S = 3.3V SDR
Generation	J = J
Bus Width	16 = x16
Package Type	B = BGA
Product Family	45 = SDR Automotive grade

Datasheet

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IS45S16160J-6BLA2 Features

Clock frequency: 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 54-pin TSOP-II 54-ball BGA

Overview

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

Related Part Number(s)

Description	Stock Qty	Available Qty
IS45S16160J-6BLA2-TR