IS45S16800F-6TLA2

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Density	128M
Org	8Mx16
Vcc	3.3V
Type	SDR
Refresh	4K
Speed	6 = 166MHz
Status	Prod
Comment
Pkg Pins	TSOP2(54), BGA(54)
Temp. Grade	A2 = Automotive Grade (-40°C to +105°C)
Solder Type	L = 100% matte Sn
Number Of Words	800 = 8M
Operating Voltage Range	S = 3.3V SDR
Generation	F = F
Bus Width	16 = x16
Package Type	T = TSOP
Product Family	45 = SDR Automotive grade

Datasheet

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IS45S16800F-6TLA2 Features

Clock frequency: 200, 166, 143 MHz
Internal bank for hiding row access/precharge
Power supply IS42/45S81600F IS42/45S16800F Vdd Vddq 3.3V 3.3V 3.3V 3.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command

Overview

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

Related Part Number(s)

Description	Stock Qty	Available Qty
IS45S16800F-6TLA2-TR