IS45S32160B-6TLA1

Density 512M
Org 16Mx32
Vcc 3.3V
Type SDR
Refresh 8K
Speed 6 = 166MHz
Status Contact ISSI
Comment
Pkg Pins TSOP2(86), BGA(90)
Temp. Grade A1 = Automotive Grade (-40°C to +85°C)
Solder Type L = 100% matte Sn
Generation B = B
Number Of Words 160 = 16M
Operating Voltage Range S = 3.3V SDR
Bus Width 32 = x32
Package Type T = TSOP
Product Family 45 = SDR Automotive grade

IS45S32160B-6TLA1 Features

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball W-BGA

Overview

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS45S32160B-6TLA1-TR IS45S32160B-7BLA2 339 288
IS45S32160B IS45S32160B-7BLA2-TR
IS45S32160B-6BLA1 IS45S32160B-7TLA1
IS45S32160B-6BLA1-TR IS45S32160B-7TLA1-TR
IS45S32160B-7BLA1 IS45S32160B-7TLA2
IS45S32160B-7BLA1-TR IS45S32160B-7TLA2-TR