IS61VPS25636B-250TQLI

Density 9M
Org 256Kx36
Vcc 2.5V
VccQ 2.5V
Status Prod
tKQ(ns) 2.6, 3.1, 3.8
Pkg Pins BGA(119), QFP(100), BGA(165)
Speed Mhz 250, 200, 166
Comment Prev Rev P/SCD, IS61VPS25636A

IS61VPS25636B-250TQLI Features

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth ex- pansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Single cycle deselect
  • Snooze MODE for reduced-power standby
  • JTAG Boundary Scan for BGA package
  • Power Supply LPS: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) VPS: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%) VVPS: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%)
  • JEDEC 100-Pin QFP, 119-ball BGA, and 165- ball BGA packages

Overview

The 9Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and net- working applications. The IS61LPS/VPS25636B and IS64LPS25636B are organized as 262,144 words by 36 bits. The IS61LPS25632B is organized as 262,144 words by 32 bits. The IS61LPS/VPS51218B is organized as 524,288 words by 18 bits. Fabricated with ISSI's ad- vanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS61VPS25636B-250TQLI-TR IS61VPS25636B-200TQLI-TR
IS61VPS25636B-200B2I IS61VPS25636B-250B2I
IS61VPS25636B-200B2I-TR IS61VPS25636B-250B2I-TR
IS61VPS25636B-200B3I IS61VPS25636B-250B3I
IS61VPS25636B-200B3I-TR IS61VPS25636B-250B3I-TR
IS61VPS25636B-200TQLI