IS67WV1M16EBLL-70BLA2-TR
特徵
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High-Speed access time :
-
- 70ns ( IS66WV1M16EALL )
- 60ns (IS66/67WV1M16EBLL )
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CMOS Lower Power Operation
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Single Power Supply
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- VDD =1.7V~1.95V( IS66WV1M16EALL )
- VDD =2.5V~3.6V (IS66/67WV1M16EBLL )
DESCRIPTION
The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are
high-speed,16M bit static RAMs organized as 1M words by
16 bits. It is fabricated using ISSI’s high performance CMOS
technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
-
Three State Outputs
levels.
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Data Control for Upper and Lower bytes