IS42RM16160D-10BLI

容量 256M
規格 16Mx16
電壓 2.5V
類型 MSDR
刷新 8K
狀態 EOL
評注
腳位數 TSOP(54), BGA(54)
速度Mhz 143
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation D = D
字數 160 = 16M
工作電壓範圍 RM = 2.5V
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42RM16160D-10BLI 特徵

  • -71 7 9.6 KEY TIMING PARAMETERS Parameter -752 CLK Cycle Time CAS Latency = 3 CAS Latency = 2 CLK Frequency CAS Latency = 3 CAS Latency = 2 Access Time from CLK CAS Latency = 3 CAS Latency = 2 143 104 133 104 7.5 9.6 5.4 8 5.4 8 1. Available for x8/x16 only 2. Available for x32 only -10 Unit 10 12 100 83 8 9 ns ns Mhz Mhz ns ns
  • OPTIONS

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42RM16160D-10BLI-TR IS42RM16160D-7BLI 229
IS42RM16160D-10TLI IS42RM16160D-7BLI-TR 6,876
IS42RM16160D-10TLI-TR IS42RM16160D-7TLI
IS42RM16160D-7BL 6,584 IS42RM16160D-7TLI-TR
IS42RM16160D-7BL-TR 6,457