IS42SM16800G-75BI-TR

容量 128M
規格 8Mx16
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = Sn/Pb
Generation G = G
字數 800 = 8M
速度 75 = 133Mhz
工作電壓範圍 SM = 3.3V
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42SM16800G-75BI-TR 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support
  • PASR(Partial Array Self Refresh)
  • Auto TCSR(Temperature Compensated Self Refresh)
  • Programmable Driver Strength Control
  • Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode

概觀

These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42SM16800G-75BI 6,455 IS42SM16800G-75BLI 6,664
IS42RM16800G-6BLI 6,268 IS42SM16800G-75BLI-TR 6,990
IS42RM16800G-6BLI-TR 6,586 IS42VM16800G-6BLI 6,339
IS42RM16800G-75BI IS42VM16800G-6BLI-TR 6,888
IS42RM16800G-75BI-TR IS42VM16800G-75BI
IS42RM16800G-75BLI 6,917 IS42VM16800G-75BI-TR
IS42RM16800G-75BLI-TR 6,511 IS42VM16800G-75BLI 6,086
IS42SM16800G-6BLI 6,949 IS42VM16800G-75BLI-TR 6,170
IS42SM16800G-6BLI-TR 6,166