IS42SM32160C-7BLI-TR

容量 512M
規格 16Mx32
電壓 2.5/3.3V
類型 MSDR
刷新 8K
狀態 EOL
評注
腳位數 BGA(90)
速度Mhz 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation C = C
字數 160 = 16M
速度 7 = 143MHz
工作電壓範圍 SM = 3.3V
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42SM32160C-7BLI-TR 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS:
  • Configuration: 16Mx32
  • Power Supply: IS42SMxxx - Vdd/Vddq = 3.3V IS42RMxxx - Vdd/Vddq = 2.5V
  • Package: 90 Ball BGA (8x13mm)
  • Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC)

概觀

: ISSI's IS42SM/RM32160C is a 512Mb Mobile Syn- chronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs signals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally con- figured by stacking two 256Mb, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42SM32160C-7BLI 380 380 IS42SM32160C-75BL-TR 6,058
IS42RM32160C-75BL 901 859 IS42SM32160C-75BLI 665 665
IS42RM32160C-75BL-TR 6,984 IS42SM32160C-75BLI-TR 6,702
IS42RM32160C-75BLI 6,331 IS42SM32160C-7BL
IS42RM32160C-75BLI-TR 6,747 IS42SM32160C-7BL-TR
IS42SM32160C-75BL 551 545