IS42VM32800D-12BL

容量 256M
規格 8Mx32
電壓 1.8V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 TSOP(86), BGA(90)
速度Mhz 100
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
Generation D = D
字數 800 = 8M
工作電壓範圍 VM = 1.8V mobile SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42VM32800D-12BL 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VMxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54), BGA (54) x32
    • TSOP II (86), BGA (90)

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42VM32800D-12BL-TR IS42VM32800D-12TLI 18,000
IS42VM32800D-12BLI IS42VM32800D-12TLI-TR 1,500
IS42VM32800D-12BLI-TR