IS61WV12816DALL-20BI

容量 2M
規格 128Kx16
腳位/封裝 BGA
電壓 1.65-3.6V
型號別 IBIS
焊接 SnPb
狀態 Prod
評注 IS61LV12816L, IS61WV12816BLL
硅片版本 D
速度(ns) 20
温規 Industrial Grade (-40C to +85°C)
電壓範圍 1.65V to 2.2V
產品系列 61 = High Speed
電壓範圍 ALL = 1.65V to 2.2V
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = SnPb
Revision D = D
字數 128 = 128K
Bit Org 16 = x16
Operating Voltage WV = Wide Voltage Range
包裝代碼 B = BGA

IS61WV12816DALL-20BI 特徵

  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS61WV12816DAxx) — Vdd 2.4V to 3.6V (IS61/64WV12816DBxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support

概觀

The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.