IS61WV25616MEBLL-10BI

容量 4M
電壓 2.4~3.6V
狀態 Prod
I / O寬度 x16
腳位數 TSOP2(44), BGA(48)
溫度範圍 -40 to 125°C
速度Mhz Ns 10, 12ns
評論上一篇 Muxed SRAM

IS61WV25616MEBLL-10BI 特徵

  • High-speed access time: 10ns, 12ns
  • Single power supply
  • - 2.4V-3.6V VDD
  • Ultra Low Standby Current with ZZ# pin
  • - IZZ = 30uA (typ.)
  • Error Detection and Correction with optional ERR1/ERR2 output pin:
  • - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection
  • ADMUX inputs/outputs : ADQ0~ADQ15
  • Three state outputs Industrial and Automotive temperature support

概觀

The ISSI IS61/64WV25616MEBLL are high-speed, low power, 4M bit ADMUX static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability and ADMUX inputs/outputs to minimize pin counts.

 

相關IC编號

IS61WV25616MEBLL-10BI-TR IS61WV25616MEBLL-10BLI-TR IS61WV25616MEBLL-12B2I-TR IS61WV25616MEBLL-12BLI-TR
IS61WV25616MEBLL-10B2I IS61WV25616MEBLL-10TI IS61WV25616MEBLL-12B2LI IS61WV25616MEBLL-12TI
IS61WV25616MEBLL-10B2I-TR IS61WV25616MEBLL-10TI-TR IS61WV25616MEBLL-12B2LI-TR IS61WV25616MEBLL-12TI-TR
IS61WV25616MEBLL-10B2LI IS61WV25616MEBLL-10TLI IS61WV25616MEBLL-12BI IS61WV25616MEBLL-12TLI
IS61WV25616MEBLL-10B2LI-TR IS61WV25616MEBLL-10TLI-TR IS61WV25616MEBLL-12BI-TR IS61WV25616MEBLL-12TLI-TR
IS61WV25616MEBLL-10BLI IS61WV25616MEBLL-12B2I IS61WV25616MEBLL-12BLI