規格 256Kx16
電壓 1.65-3.6V
速度(ns) 55
腳位/封裝 T = TSOP
狀態 Prod
型號別 IBIS
產品系列 62 = 低電量
硅片版本 D
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包

IS62WV25616DBLL-55TLI-TR 特徵

  • High-speed access time: 35, 45, 55 ns
  • CMOS low power operation 30 mW (typical) operating 6 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available


The ISSI IS62WV25616DALL and IS62/65WV25616DBLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselcted) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV25616DALL and IS62/65WV25616DBLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).