規格 256Kx16
電壓 2.4-3.6V
速度(ns) 10
腳位/封裝 CT = Copper TSOP
狀態 Prod
評注 ECC Based SRAM
產品系列 64 = 車用高速
硅片版本 ED
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 A1 = 車規 (-40C to +85°C)

IS64WV25616EDBLL-10CTLA1 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby
  • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available


The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.