IS64WV6416EEBLL-10BA3-TR

容量 1M
規格 64Kx16
電壓 2.4-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 8, 10
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IS64WV6416EEBLL-10BA3-TR 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) FEBRUARY 2014 CMOS standby
  • Single power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

概觀

The ISSI IS61/64WV6416EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with in- novative circuit design techniques, yields high-performance and low power consumption devices.

 

相關IC编號

IS64WV6416EEBLL-10BA3 IS64WV6416EEBLL-10BLA3-TR IS64WV6416EEBLL-10CTLA1-TR IS64WV6416EEBLL-8BLA1-TR
IS64WV6416EEBLL-10BA1 IS64WV6416EEBLL-10CTA1 IS64WV6416EEBLL-10CTLA3 IS64WV6416EEBLL-8CTA1
IS64WV6416EEBLL-10BA1-TR IS64WV6416EEBLL-10CTA1-TR IS64WV6416EEBLL-10CTLA3-TR IS64WV6416EEBLL-8CTA1-TR
IS64WV6416EEBLL-10BLA1 IS64WV6416EEBLL-10CTA3 IS64WV6416EEBLL-8BA1 IS64WV6416EEBLL-8CTLA1
IS64WV6416EEBLL-10BLA1-TR IS64WV6416EEBLL-10CTA3-TR IS64WV6416EEBLL-8BA1-TR IS64WV6416EEBLL-8CTLA1-TR
IS64WV6416EEBLL-10BLA3 IS64WV6416EEBLL-10CTLA1 IS64WV6416EEBLL-8BLA1