IS65WV12816EBLL-55BLA3-TR

容量 2M
規格 128Kx16
電壓 2.2-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 55
評論上一篇  
電壓範圍 BLL = 2.5V to 3.6V
温度等级 A3 = Automotive Grade (-40C to +125°C)
No Words 128K = 128K
焊料類型 L = Lead-free (ROHS Compliant)
速度 55NS = 55NS
Bit Org 16 = 16
Operating Voltage WV = Wide Voltage Range
產品系列 65 = Automotive Low Power
包裝代碼 B = BGA
外包裝 Tape on Reel

IS65WV12816EBLL-55BLA3-TR 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 18 mA (max) at 85°C
    • CMOS Standby Current: 5.4uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62WV12816EALL)
    • 2.2V-3.6V VDD (IS62/65WV12816EBLL)
  • Three state outputs

概觀

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.

 

相關IC编號

IS65WV12816EBLL-55BLA3 IS65WV12816EBLL-55CTLA3 IS65WV12816EBLL-55CTLA3-TR