IS66WV1M16DBLL-55BLI

容量 16M
規格 1Mx16
腳位/封裝 mBGA(48)
電壓 1.7-1.95V
焊接 Lead-free (RoHS Compliant)
狀態 Prod
評注 Standard Asynch
硅片版本 D
速度(ns) 70
温規 Industrial Grade (-40C to +85°C)
電壓範圍 2.2V (2.4V/2.5V) to 3.6V
產品系列 Pseudo SRAM
電壓 - 電源 BLL = 3V
密度配置 1M16 = 16Mb /1M x16
包裝代碼 B = 48 TFBGA 6x8
Item 66 = Pseudo SRAM/HyperRAM™
ROHS版 L = true
Revision D = D
產品類別 WV = Standard Asynch PSRAM
溫度範圍 I = Industrial (-40°C to 85°C)

IS66WV1M16DBLL-55BLI 特徵

  • High-speed access time:
    • 70ns (IS66WV1M16DALL/DBLL)
    • 55ns (IS66WV1M16DBLL)
  • CMOS low power operation
  • Single power supply
    • Vdd = 1.7V - 1.95V (IS66WV1M16dALL)
    • Vdd = 2.5V - 3.6V (IS66WV1M16dBLL)
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available

概觀

The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS66WV1M16DALL/DBLL is packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm). The device is also available for die sales.