IS66WV1M16EBLL-70BLI-TR

容量 16M
規格 1Mx16
電壓 1.7-1.95V
狀態 Prod
腳位數 mBGA(48)
速度Ns 70
評論上一篇 Standard Asynch
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40C to +85°C)
No Words 1M = 1M
焊料類型 L = Lead-free (ROHS Compliant)
速度 70NS = 70NS
Bit Org 16 = 16
Operating Voltage WV = Wide Voltage Range
產品系列 66 = Pseudo SRAM/HyperRAM
包裝代碼 B = BGA
外包裝 Tape on Reel

IS66WV1M16EBLL-70BLI-TR 特徵

  • High-Speed access time :
  • - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )
  • CMOS Lower Power Operation
  • Single Power Supply
    • VDD =1.7V~1.95V( IS66WV1M16EALL )
    • VDD =2.5V~3.6V (IS66/67WV1M16EBLL ) DESCRIPTION The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input
  • Three State Outputs levels.
  • Data Control for Upper and Lower bytes
 

相關IC编號

IS66WV1M16EBLL-70BLI IS67WV1M16EBLL-55BLA1 IS67WV1M16EBLL-55BLA2-TR IS67WV1M16EBLL-70BLA2
IS66WV1M16EBLL-55BLI IS67WV1M16EBLL-55BLA1-TR IS67WV1M16EBLL-70BLA1 IS67WV1M16EBLL-70BLA2-TR
IS66WV1M16EBLL-55BLI-TR IS67WV1M16EBLL-55BLA2 IS67WV1M16EBLL-70BLA1-TR