IS66WVC1M16ALL-7008BLI

規格 1Mx16
腳位/封裝 VFBGA(54)
電壓 1.7-1.95V
焊接 Lead-free (RoHS Compliant)
狀態 Prod
評注 CRAM 1.5
速度(ns) 70
温規 Industrial Grade (-40C to +85°C)
電壓範圍 1.65V to 2.2V
產品系列 Pseudo SRAM
Item 66 = Pseudo SRAM/HyperRAM™
ROHS版 L = true
產品類別 WVC = Cellular RAM 1.5
溫度範圍 I = Industrial (-40°C to 85°C)
速度 7008 = 80 MHz
電壓 - 電源 ALL = 1.8V
密度配置 1M16 = 16Mb /1M x16
包裝代碼 B = 54-ball VFBGA

IS66WVC1M16ALL-7008BLI 特徵

  • Single device supports asynchronous , page, and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance
    • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns
  • Burst mode for Read and Write operation
    • 4, 8, 16,32 or Continuous
  • Low Power Consumption
    • Asynchronous Operation < 25 mA
    • Intrapage Read < 18mA
    • Burst operation < 45 mA (@133Mhz)
    • Standby < 80 uA(max.)
    • Deep power-down (DPD) < 3uA (Typ)
  • Low Power Feature
    • Reduced Array Refresh
    • Temperature Controlled Refresh
    • Deep power-down (DPD) mode
  • Operation Frequency up to 133Mhz
  • Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C

概觀

The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.