IS66WVC2M16EALL-7010BLI

容量 32M
規格 2Mx16
電壓 1.7-1.95V
狀態 Prod
腳位數 VFBGA(54)
速度Ns 70
評論上一篇 CRAM 1.5
Item 66 = Pseudo SRAM/HyperRAM™
ROHS版 L = true
產品類別 WVC = Cellular RAM 1.5
溫度範圍 I = Industrial (-40°C to 85°C)
速度 7010 = 104 MHz
電壓 - 電源 ALL = 1.8V
密度配置 2M16 = 32Mb /2M x16
包裝代碼 B = 54-ball VFBGA

IS66WVC2M16EALL-7010BLI 特徵

  • Single device supports asynchronous , page, and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance
    • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
    • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
  • Burst mode for Read and Write operation
    • 4, 8, 16,32 or Continuous
  • Low Power Consumption
    • Asynchronous Operation < 30 mA
    • Intrapage Read < 20mA
    • Burst operation < 45 mA (@133Mhz)
    • Standby < 150 uA(max.)
    • Deep power-down (DPD) < 3uA (Typ)
  • Low Power Feature
    • Reduced Array Refresh
    • Temperature Controlled Refresh
    • Deep power-down (DPD) mode
  • Operation Frequency up to 133Mhz
  • Operating temperature Range Industrial -40°C~85°C

概觀

The IS66WVC2M16EALL/CLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS66WVC2M16EALL-7010BLI-TR 5,000 IS66WVC2M16EALL-7013BLI
IS66WVC2M16EALL-7008BLI IS66WVC2M16EALL-7013BLI-TR
IS66WVC2M16EALL-7008BLI-TR