IS66WVC4M16ECLL-7008BLI

容量 64M
規格 4Mx16
電壓 1.7-1.95V
狀態 Prod
腳位數 VFBGA(54)
速度Ns 70
評論上一篇 CRAM 1.5
產品類別 C = Cellular RAM 1.5
ROHS版 L = true
溫度範圍 I = Industrial (-40°C to 85°C)
包裝代碼 B = BGA
電壓 - 電源 CLL = 1.8V
密度配置 4M16 = 64Mb /4M x16
Speed Value 7008 = 7008
Revision E = E

IS66WVC4M16ECLL-7008BLI 特徵

  • Single device supports asynchronous , page,
  • Low Power Consumption and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance
    • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
    • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
  • Burst mode for Read and Write operation
    • 4, 8, 16,32 or Continuous
    • Asynchronous Operation < 30 mA
    • Intrapage Read < 20mA
    • Burst operation < 35 mA (@104Mhz)
    • Standby < 180 uA (max.)
    • Deep power-down (DPD) < 3uA (Typ)
  • Low Power Feature
    • Reduced Array Refresh
    • Temperature Controlled Refresh
    • Deep power-down (DPD) mode
  • Operation Frequency up to 104Mhz
  • Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C

概觀

The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

 

相關IC编號

IS66WVC4M16ECLL-7008BLI-TR IS66WVC4M16ECLL-7010BLI-TR IS67WVC4M16ECLL-7010BLA1-TR
IS66WVC4M16ECLL-7010BLI IS67WVC4M16ECLL-7010BLA1