IS66WVE4M16BLL-70BLI-TR

規格 4Mx16
腳位/封裝 TFBGA(48)
電壓 2.7 to 3.6V
電壓 - 電源 BLL = 3V
焊接 Lead-free (RoHS Compliant)
狀態 Prod
評注 Asynch/Page
外包裝 Tape on Reel
速度(ns) 70
温規 Industrial Grade (-40C to +85°C)
產品類別 WVE = Asynch/Page PSRAM
產品系列 Pseudo SRAM
Item 66 = Pseudo SRAM/HyperRAM™
ROHS版 L = true
溫度範圍 I = Industrial (-40°C to 85°C)
速度 70 = 70 MHz
密度配置 4M16 = 64Mb /4M x16
包裝代碼 B = 48-ball TFBGA

IS66WVE4M16BLL-70BLI-TR 特徵

  • Asynchronous and page mode interface
  • Dual voltage rails for optional performance
    • VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
  • Page mode read access
    • Interpage Read access : 70ns
    • Intrapage Read access : 20ns
  • Low Power Consumption
    • Asynchronous Operation < 30 mA
    • Intrapage Read < 18mA
    • Standby < 180 uA (max.)
    • Deep power-down (DPD) < 3uA (Typ) Notes:
  • Low Power Feature
    • Temperature Controlled Refresh
    • Partial Array Refresh
    • Deep power-down (DPD) mode
  • Operating temperature Range Industrial -40°C~85°C

概觀

The IS66WVE4M16BLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.