IS66WVE4M16TBLL-55BLI

容量 64M
規格 4Mx16
電壓 1.7-1.95V/ 2.7-3.6V
狀態 Prod
腳位數 TFBGA(48)
速度Ns 70
評論上一篇 Asynch/ Page
產品類別 E = Asynch/Page PSRAM
ROHS版 L = true
溫度範圍 I = Industrial (-40°C to 85°C)
包裝代碼 B = BGA
電壓 - 電源 BLL = 3V
密度配置 4M16 = 64Mb /4M x16
Speed Value 55 = 55
Revision T = T

IS66WVE4M16TBLL-55BLI 特徵

  • Asynchronous and page mode interface
  • Low Power Feature
  • Dual voltage rails for optional performance
    • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
    • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
    • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
  • Page mode read access
    • Interpage Read access : 60ns, 70ns
    • Intrapage Read access : 25ns
  • Low Power Consumption
    • Asynchronous Operation < 30 mA
    • Intrapage Read < 23mA
    • Standby < 200 uA (max.) at -40°C~85°C
    • Deep power-down (DPD)
    • ALL/CLL: < 3µA (Typ)
    • BLL: < 10µA (Typ)
    • Temperature Controlled Refresh
    • Partial Array Refresh
    • Deep power-down (DPD) mode
  • Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C Automotive A2: -40°C~105°C

概觀

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

 

相關IC编號

IS66WVE4M16TBLL-55BLI-TR IS66WVE4M16TBLL-70BLI-TR IS67WVE4M16TALL-70BLA1-TR IS67WVE4M16TBLL-70BLA2-TR
IS66WVE4M16TALL-70BLI IS66WVE4M16TCLL-70BLI IS67WVE4M16TBLL-70BLA1 IS67WVE4M16TCLL-70BLA1
IS66WVE4M16TALL-70BLI-TR IS66WVE4M16TCLL-70BLI-TR IS67WVE4M16TBLL-70BLA1-TR IS67WVE4M16TCLL-70BLA1-TR
IS66WVE4M16TBLL-70BLI IS67WVE4M16TALL-70BLA1 IS67WVE4M16TBLL-70BLA2