IS46DR16128-3DBLA1

容量 2G
規格 128Mx16
腳位/封裝 BGA(84)
電壓 1.8V
刷新 8K
速度 up to 333 Mhz
字數 128M
型號別 IBIS
焊接 SnAgCu
狀態 EOL
類型 DDR2
總線寬度 16 = x16
温規 Automotive Grade (-40C to +85°C)
CL(CAS延遲) 5
產品系列 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
字數 1283 = 1283M
工作電壓範圍 DR = 1.8V DDR2

IS46DR16128-3DBLA1 特徵

  • Clock frequency up to 333MHz (667 MT/s Data Rate)
  • 8 internal banks for concurrent operation
  • 4-bit prefetch architecture
  • Programmable CAS Latency: 3, 4, 5, 6 and 7
  • Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6
  • Write Latency = Read Latency-1
  • Programmable Burst Sequence: Sequential or Interleave
  • Programmable Burst Length: 4 and 8
  • Automatic and Controlled Precharge Command
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8 µs (8192 cycles/64 ms)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • ODT (On-Die Termination)
  • Weak Strength Data-Output Driver Option OPTIONS
  • Configuration: − 128Mx16 (two stacked 16M x 8 x8 banks)
  • Package: − 84-ball FBGA Clock Cycle Timing SEPTEMBER 2012
  • Bidirectional differential Data Strobe (Single-ended data-strobe is an optional feature)
  • On-Chip DLL aligns DQ and DQs transitions with CK transitions
  • DQS# can be disabled for single-ended data strobe
  • Differential clock inputs CK and CK#
  • VDD and VDDQ = 1.8V ± 0.1V
  • PASR (Partial Array Self Refresh)
  • SSTL_18 interface
  • tRAS lockout supported

概觀

Input clocks Clock enable Chip Select Command control inputs Address Bank Address I/O Upper Byte Data Strobe Lower Byte Data Strobe Input data mask Supply voltage Ground DQ power supply DQ ground Reference voltage DLL power supply DLL ground On Die Termination Enable No connect.