IS46DR86400B-37CBLA2-TR

規格 64Mx8
腳位/封裝 BGA(60)
電壓 1.8V
刷新 8K
速度 37 = 266MHz
字數 64M
型號別 IBIS
焊接 SnAgCu
狀態 OBS
外包裝 Tape on Reel
類型 DDR2
總線寬度 8 = x8
温規 Automotive Grade (-40C to +105°C)
CL(CAS延遲) C = 4
代/版本 B
產品系列 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
Generation B = B
字數 6400 = 64M
工作電壓範圍 DR = 1.8V DDR2
腳位/封裝 B = BGA

IS46DR86400B-37CBLA2-TR 特徵

  • Clock frequency up to 400MHz
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5 and 6
  • Programmable Additive Latency: 0, 1, 2, 3, 4 and 5
  • Write Latency = Read Latency-1
  • Programmable Burst Sequence: Sequential or Interleave
  • Programmable Burst Length: 4 and 8
  • Automatic and Controlled Precharge Command
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8 µs (8192 cycles/64 ms)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • ODT (On-Die Termination)
  • Weak Strength Data-Output Driver Option
  • Bidirectional differential Data Strobe (Single- ended data-strobe is an optional feature) AUGUST 2012
  • On-Chip DLL aligns DQ and DQs transitions with CK transitions
  • Differential clock inputs CK and CK#
  • VDD and VDDQ = 1.8V ± 0.1V
  • PASR (Partial Array Self Refresh)
  • SSTL_18 interface
  • Read Data Strobe supported (x8 only)
  • tRAS lockout supported Internal four bank operations with single pulsed RAS
  • Operating temperature: Commercial (TA = 0°C to +70°C ; TC = 0°C to +85°C) Industrial (TA = -40°C to +85°C; TC = -40°C to +95°C) Automotive, A1 (TA = -40°C to +85°C; TC = -40°C to +95°C) Automotive, A2 (TA = -40°C to +105°C; TC = -40°C to +105°C) OPTIONS
  • Configuration: − 64Mx8 (16M x 8 x 4 banks) − 32Mx16 (8M x 16 x 4 banks)

概觀

Input clocks Clock enable Chip Select Command control inputs Address Bank Address I/O Upper Byte Data Strobe Lower Byte Data Strobe Input data mask Supply voltage Ground DQ power supply DQ ground Reference voltage DLL power supply DLL ground On Die Termination Enable No connect.