IS66WVH8M8BLL-100B1LI-TR

容量 64M
規格 8Mx8
電壓 2.7-3.6V
狀態 Prod
腳位數 BGA(24)
速度Mhz 100
評論上一篇
Item 66 = Pseudo SRAM/HyperRAM™
ROHS版 L = true
產品類別 WVH = HyperRAM
溫度範圍 I = Industrial (-40°C to 85°C)
速度 100 = 100 MHz
電壓 - 電源 BLL = 3V
密度配置 8M8 = 64Mb /8M x8
包裝代碼 B1 = 24-ball TFBGA
外包裝 Tape on Reel

IS66WVH8M8BLL-100B1LI-TR 特徵

  • 3.0V I/O, 11 bus signals
    • Single ended clock (CK)
  • 1.8V I/O, 12 bus signals
    • Differential clock (CK, CK#)
  • Chip Select (CS#)
  • 8-bit data bus (DQ[7:0])
  • Read-Write Data Strobe (RWDS)
    • Bidirectional Data Strobe / Mask
    • Output at the start of all transactions to indicate refresh latency
    • Output during read transactions as Read Data Strobe
    • Input during write transactions as Write Data Mask
  • RWDS DCARS Timing
    • During read transactions RWDS is offset by a second clock, phase shifted from CK
    • The Phase Shifted Clock is used to move the RWDS transition edge within the read data eye Performance Summary Read Transaction Timings Maximum Clock Rate at 1.8V VCC/VCCQ Maximum Clock Rate at 3.0V VCC/VCCQ Maximum Access Time, (tACC at 166 MHz) Maximum CS# Access Time to first word at 166 MHz (excluding refresh latency) 166 MHz 100 MHz 36 ns 56 ns High Performance
  • Up to 333MB/s
  • Double-Data Rate (DDR) - two data transfers per clock
  • 166-MHz clock rate (333 MB/s) at 1.8V VCC
  • 100-MHz clock rate (200 MB/s) at 3.0V VCC
  • Sequential burst transactions
  • Configurable Burst Characteristics
    • Wrapped burst lengths:
    • 16 bytes (8 clocks)
    • 32 bytes (16 clocks)
    • 64 bytes (32 clocks)
    • 128 bytes (64 clocks)
    • Linear burst
    • Hybrid option - one wrapped burst followed by linear burst
    • Wrapped or linear burst type selected in each transaction
    • Configurable output drive strength

概觀

The IS66/67WVH8M8ALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS66WVH8M8BLL-100B1LI 10,000 IS67WVH8M8BLL-100B1LA2-TR
IS66WVH8M8BLL-100B2LI 10,000 IS67WVH8M8BLL-100B2LA1
IS66WVH8M8BLL-100B2LI-TR IS67WVH8M8BLL-100B2LA1-TR
IS67WVH8M8BLL-100B1LA1 IS67WVH8M8BLL-100B2LA2
IS67WVH8M8BLL-100B1LA1-TR IS67WVH8M8BLL-100B2LA2-TR
IS67WVH8M8BLL-100B1LA2