IS42R16160D-75TLI-TR

容量 256M
規格 16Mx16
電壓 2.5V
類型 SDR
刷新 8K
狀態 EOL
評注
腳位數 TSOP2(54), BGA(54)
速度Mhz 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
Generation D = D
字數 160 = 16M
速度 75 = 133Mhz
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
總線寬度 16 = x16
腳位/封裝 T = TSOP
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42R16160D-75TLI-TR 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 2.5V + 0.2V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II (x8 and x16) 54-ball BGA (x16 only)

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42R16160D-75TLI IS45R16160D-75BLA2 588
IS42R16160D-75BL IS45R16160D-75BLA2-TR
IS42R16160D-75BL-TR IS45R16160D-75CTNA2
IS42R16160D-75BLI IS45R16160D-75CTNA2-TR
IS42R16160D-75BLI-TR IS45R16160D-75TLA1
IS42R16160D-75TL IS45R16160D-75TLA1-TR
IS42R16160D-75TL-TR IS45R16160D-75TLA2
IS45R16160D-75BLA1 IS45R16160D-75TLA2-TR
IS45R16160D-75BLA1-TR