IS42RM16400M-6BLI

容量 64M
規格 4Mx16
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 Prod
評注  
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation M = M
總線寬度 16 = 16
速度 6 = 166MHz
工作電壓範圍 RM = 2.5V
CL(CAS延遲) B = 3
字數 4M = 4M
產品系列 42 = SDR Commercial/Industrial grade

IS42RM16400M-6BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength - Deep Power Down Mode

概觀

These IS42SM/RM/VM16400M are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits.

 

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