IS42RM32200K-6BLI

容量 64M
規格 2Mx32
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注  
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation K = K
總線寬度 32 = 32
速度 6 = 166MHz
工作電壓範圍 RM = 2.5V
CL(CAS延遲) B = 3
字數 2M = 2M
產品系列 42 = SDR Commercial/Industrial grade

IS42RM32200K-6BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.

 

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