IS42RM32400G-6BLI-TR

容量 128M
規格 4Mx32
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation G = G
字數 400 = 4M
速度 6 = 166MHz
工作電壓範圍 RM = 2.5V
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42RM32400G-6BLI-TR 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support
  • PASR(Partial Array Self Refresh)
  • Auto TCSR(Temperature Compensated Self Refresh)
  • Programmable Driver Strength Control
  • Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode

概觀

These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.

 

相關IC编號

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IS42RM32400G-6BLI 6,669 IS42SM32400G-75BLI 6,315
IS42RM32400G-75BI 6,672 IS42SM32400G-75BLI-TR 6,369
IS42RM32400G-75BI-TR 6,804 IS42VM32400G-6BLI 6,946
IS42RM32400G-75BLI 6,135 IS42VM32400G-6BLI-TR 6,154
IS42RM32400G-75BLI-TR 5,000 IS42VM32400G-75BI
IS42SM32400G-6BLI 6,049 IS42VM32400G-75BI-TR
IS42SM32400G-6BLI-TR 6,917 IS42VM32400G-75BLI 6,644
IS42SM32400G-75BI 6,835 IS42VM32400G-75BLI-TR 6,930
IS42SM32400G-75BI-TR 6,394