IS42SM32160E-75BLI-TR

容量 512M
規格 16Mx32
電壓 1.8/2.5/3.5V
類型 MSDR
刷新 8K
狀態 Prod
評注  
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 blank = Sn/Pb
Generation E = E
總線寬度 32 = 32
速度 7 = 143MHz
工作電壓範圍 SM = 3.3V
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42SM32160E-75BLI-TR 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade)
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2, 3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32.

 

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