IS42SM32800D-75BL

容量 256M
規格 8Mx32
電壓 2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 TSOP(86), BGA(90)
速度Mhz 133
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
Generation D = D
字數 800 = 8M
速度 75 = 133Mhz
工作電壓範圍 SM = 3.3V
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42SM32800D-75BL 特徵

  • -71 7 9.6 KEY TIMING PARAMETERS Parameter -752 CLK Cycle Time CAS Latency = 3 CAS Latency = 2 CLK Frequency CAS Latency = 3 CAS Latency = 2 Access Time from CLK CAS Latency = 3 CAS Latency = 2 143 104 133 104 7.5 9.6 5.4 8 5.4 8 1. Available for x8/x16 only 2. Available for x32 only -10 Unit 10 12 100 83 8 9 ns ns Mhz Mhz ns ns
  • OPTIONS

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42SM32800D-75BL-TR 6,438 IS42RM32800D-75TLI-TR
IS42RM32800D-10BLI IS42SM32800D-10BLI 17
IS42RM32800D-10BLI-TR IS42SM32800D-10BLI-TR
IS42RM32800D-10TLI IS42SM32800D-10TLI
IS42RM32800D-10TLI-TR IS42SM32800D-10TLI-TR
IS42RM32800D-75BL 5,000 IS42SM32800D-75BLI 6,282
IS42RM32800D-75BL-TR 6,624 IS42SM32800D-75BLI-TR 5,000
IS42RM32800D-75BLI 6,855 IS42SM32800D-75TLI 104 104
IS42RM32800D-75BLI-TR 6,233 IS42SM32800D-75TLI-TR
IS42RM32800D-75TLI 6,959