IS42VM16160D-8TLI-TR

容量 256M
規格 16Mx16
電壓 1.8V
類型 MSDR
刷新 8K
狀態 EOL
評注  
腳位數 TSOP(54), BGA(54)
速度Mhz 125
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation D = D
總線寬度 16 = 16
工作電壓範圍 VM = 1.8V mobile SDR
CL(CAS延遲) T = 17
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42VM16160D-8TLI-TR 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VMxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54), BGA (54) x32
    • TSOP II (86), BGA (90)

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

IS42VM16160D-8TLI IS42VM16160D-8BL-TR IS42VM16160D-8BLI-TR
IS42VM16160D-8BL IS42VM16160D-8BLI