容量 64M
規格 4Mx16
電壓 1.8/2.5/3.3V
刷新 4K
狀態 EOL
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 blank = Sn/Pb
Generation K = K
總線寬度 16 = 16
速度 7 = 143MHz
工作電壓範圍 VM = 1.8V mobile SDR
字數 4M = 4M
產品系列 42 = SDR Commercial/Industrial grade

IS42VM16400K-75BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode


These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.



IS42VM16400K-75BLI-TR IS42RM16400K-75BLI IS42SM16400K-6BLI-TR IS42VM16400K-6BLI
IS42RM16400K-6BLI IS42RM16400K-75BLI-TR IS42SM16400K-75BLI IS42VM16400K-6BLI-TR
IS42RM16400K-6BLI-TR IS42SM16400K-6BLI IS42SM16400K-75BLI-TR