IS42VM16800F-75BLI-TR

規格 8Mx16
腳位/封裝 BGA(54)
電壓 1.8V
刷新 4K
字數 8M
焊接 SnAgCu
狀態 EOL
外包裝 Tape on Reel
類型 MSDR
總線寬度 16 = x16
速度(MHz) 133
温規 Industrial Grade (-40C to +85°C)
代/版本 F
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation F = F
字數 800 = 8M
速度 75 = 133Mhz
工作電壓範圍 VM = 1.8V mobile SDR
腳位/封裝 B = BGA

IS42VM16800F-75BLI-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. y /
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control
  • - Full Strength or 1/2, 1/4 of Full Strength
  • Deep Power Down Mode
  • Deep Power Down Mode.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support.
  • - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh)

概觀

These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.