容量 128M
規格 8Mx16
電壓 1.8/2.5/3.3V
刷新 4K
狀態 EOL
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation G = G
總線寬度 16 = 16
速度 6 = 166MHz
工作電壓範圍 VM = 1.8V mobile SDR
CL(CAS延遲) B = 3
字數 8M = 8M
產品系列 42 = SDR Commercial/Industrial grade

IS42VM16800G-6BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support
  • PASR(Partial Array Self Refresh)
  • Auto TCSR(Temperature Compensated Self Refresh)
  • Programmable Driver Strength Control
  • Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode


These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.



IS42VM16800G-6BLI-TR IS42RM16800G-75BLI IS42SM16800G-75BI-TR IS42VM16800G-75BLI
IS42RM16800G-6BLI IS42RM16800G-75BLI-TR IS42SM16800G-75BLI IS42VM16800G-75BLI-TR
IS42RM16800G-6BLI-TR IS42SM16800G-6BLI IS42SM16800G-75BLI-TR
IS42RM16800G-75BI IS42SM16800G-6BLI-TR IS42VM16800G-75BI
IS42RM16800G-75BI-TR IS42SM16800G-75BI IS42VM16800G-75BI-TR